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Цитата:
We are continuing to gather large volumes of FLASH endurance and retention characterization data on all of our products to ensure the performance of the FLASH memory. This data in combination with the full endurance and retention screening process that all of our production devices are subjected to gives us high confidence in the reliability of these memories.
The results of our findings have allowed us to increase the minimum endurance specification from 10,000 write/erase cycles to 20,000 write/erase cycles on all of the devices in our product line. The data sheets for the newer devices, the C8051F020 family and the C8051F300 family, already reflect these new specifications. The data sheets for our older devices are being updated.
E-mail: info@telesys.ru