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HONOLULU – June 10, 2002 – In a move that sets the next industry milestone and reinforces its leadership position, Motorola’s (NYSE:MOT) Semiconductor Products Sector (SPS) in collaboration with Motorola Labs is unveiling the first 1 megabit (Mbit) MRAM (magnetoresistive random access memory) universal memory chip this week at the 2002 VLSI (Very Large Scale Integration) Symposia on Technology and Circuits. This achievement significantly advances the state of research in universal memory, bringing the technology closer to revolutionizing the semiconductor memory market.
The memory successfully demonstrated by Motorola is a low power 1Mb MRAM based on a memory cell defined by a single transistor (1T) and a single Magnetic Tunnel Junction (MTJ) with read and write cycles of less than 50ns. This is the largest MRAM demonstration to date and the first to be integrated with CMOS using copper interconnect technology. The 64K x 16 memory design is based on a 0.6 micron CMOS process and was fabricated on a 200mm substrate using copper interconnects. A new structure of cladding magnetic material was used on the copper interconnect lines to reduce the power needed to program the bits by a factor of four. This structure provides a high performance, low power, and cost competitive memory.
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